[2PS-068]
Thermal Atomic Layer Deposition of Thin NiOx Films for Highly Stable Inverted Perovskite Solar Cells
발표자Asmaa Mohamed (Jeonbuk National University)
연구책임자강재욱 (전북대학교)
Abstract
Thermal atomic layer deposition (ALD) of nickel oxide (NiOₓ) is a promising route for robust hole-transport layers in inverted perovskite solar cells (IPSCs). However, most ALD processes rely on aggressive oxidants (ozone, plasma, or H₂O₂), limiting interfacial compatibility and scalability. Here, we report the first purely thermal ALD process using deionized water as a benign, industry-compatible oxidant, in combination with Ni(dmamb)₂, to deposit high-quality NiOₓ films. The process shows self-limiting growth with linear thickness evolution at 200 °C. The ALD-NiOₓ films exhibit high transparency, favorable work-function alignment, low roughness, and uniform morphology, outperforming nanoparticle-based NiOₓ(NP-NiOx). IPSCs employing ALD-NiOₓ achieve up to 5% efficiency improvement over NP-NiOx, with a champion PCE of 19.15%, and demonstrate strong thermal stability (85 °C, 85% RH), retaining ~75% efficiency after 1000 h.