[3PS-025]
Organic Field-Effect Transistor Memory Using Highly Ordered Gold Nanodot Arrays
발표자윤종인 (인하대학교)
연구책임자김승현 (인하대학교)
Abstract
Organic non-volatile memory transistors are essential for next-generation flexible and low-power electronics. A fundamental challenge in this field lies in achieving long-range structural order within the charge-trapping layer to ensure stable and uniform device performance. This study presents an organic floating-gate memory device incorporating a highly ordered gold nanoparticle (AuNP) array as the charge-trapping layer, fabricated via block copolymer (BCP) self-assembly. The exceptional structural regularity of the floating gate ensures uniform energy levels for precise charge trapping, enabling highly stable and reproducible memory operations with enhanced reliability. This strategy provides a robust, versatile, and highly scalable pathway for the rational design and fabrication of next-generation, energy-efficient organic memory systems.