[2O12-2]
Self-Aligned Solution Processed Metal Oxide Thin Films for Scalable Large-Area Multivalued Logic Devices
발표자백석현 (아주대학교)
연구책임자박성준 (아주대학교)
Abstract
Rapid growth in digital information density has increased demand for multivalued logic (MVL) systems that reduce energy consumption and computational latency. Heterojunction transistors are promising architectures for MVL circuits; however, partially layered structures have been largely limited to vacuum-deposited or transferred materials due to patterning constraints. Here, we present a CuxO/IGZO heterojunction-based ternary inverter fabricated via a sol–gel process and direct patterning using a self-assembled monolayer (SAM). The SAM approach serves as an alternative to photolithography while maintaining electrical performance comparable to pristine devices. Structural and depth analyses confirm a smooth, partially overlapped interface and an oxidation gradient in CuxO, promoting efficient hole injection and negative differential transconductance. These results highlight the potential of solution-processable oxide electronics for scalable, cost-effective MVL devices.