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분자전자 부문위원회(I)

  • Apr 09(Thu), 2026, 09:00 - 12:00
  • 포스터장
  • Chair : 김재홍, 양상희
09:00 - 10:30
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[1PS-005]

우수논문발표상 응모자

Ambipolar Electrolyte-Gated Transistors and Logic Circuits via a Vertical Device Architecture

발표자김규연 (인하대학교)

연구책임자박동현 (인하대학교)

공동저자김규연 (인하대학교), 박동현 (인하대학교), 김률광 (인하대학교), 이근형 (인하대학교)

Abstract

Electrolyte-gated transistors (EGTs) have attracted considerable interest due to their low-voltage operation and compatibility with soft and flexible electronic platforms. Here, we report a vertical EGT architecture that reduces the effective channel length to the submicron scale, resulting in enhanced on-current and transconductance. In parallel, ambipolar organic semiconductors offer a promising route to simplified device fabrication and circuit integration by enabling both hole and electron transport within a single material. However, practical ambipolar logic remains challenging because balanced carrier injection and stable switching are difficult to achieve. In this work, we demonstrate vertical ambipolar EGTs based on a single high-performance ambipolar organic semiconductor. The ambipolar electrochemical operation enables complementary logic functionality using one semiconducting material, providing a simple and scalable pathway toward integrated organic logic circuits.

Poster