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분자전자 부문위원회(I)

  • Apr 09(Thu), 2026, 09:00 - 12:00
  • 포스터장
  • Chair : 김재홍, 양상희
09:00 - 10:30
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[1PS-011]

우수논문발표상 응모자

Wavelength-Selective NIR Photonic Synapses Based on a Polymer Floating-Gate Flash Memory Architecture

발표자김윤성 (한양대학교)

연구책임자정인환 (한양대학교), 박희준 (한양대학교)

공동저자김윤성 (한양대학교), 표승옥 (한양대학교), 정범호 (한양대학교), 정인환 (한양대학교), 박희준 (한양대학교)

Abstract

Near-infrared (NIR) light enables a wide range of applications, such as bionic perception, artificial vision systems, but NIR-responsive optoelectronic devices remain underexplored . In this work, we suggest a photonic synaptic transistor based on a flash-memory architecture.  NIR-absorbing polymer and Al₂O₃ are employed as the photoactive layer and tunneling dielectric, respectively. Upon 1200 nm NIR light illumination, electron–hole pairs are generated in the polymer. The photogenerated holes tunnel through the Al₂O₃ layer into the organic semiconductor channel, while the electrons remain trapped in the floating-gate region. This optically induced charge transfer and trapping enable synaptic-like functions, including EPSC, PPF, and long-term potentiation/depression. Leveraging wavelength-selective NIR absorption together with non-volatile conductance modulation, this work suggests a pathway toward NIR-responsive optoelectronic/neuromorphic computing applications.

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