The Polymer Society of Korea

Abstract

Silicon based integrated circuit technology in the sub 10 nanometer regime faces coupled bottlenecks, including increased stochastic defectivity and deterioration of line edge and line width roughness. These limitations intensify as extreme ultraviolet lithography adopts higher numerical aperture optics, because the reduced depth of focus drives ultrathin photoresist films and low aspect ratio patterns, narrowing process latitude and weakening etch mask performance during pattern transfer. This work reframes next generation material requirements from photoresist sensitivity alone to a quantitative description of how block copolymer microphase separation forms, transitions between ordered and disordered states, and remains stable. High interaction parameter tin containing block copolymers are used to link phase selection, domain spacing, degree of order, transition behavior, ordering kinetics, and thermal history stability to tin enabled absorption and oxidation derived durability.