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분자전자 부문위원회(II)

  • Apr 09(Thu), 2026, 15:00 - 19:00
  • 포스터장
  • Chair : 김종호, 이규리
17:00 - 18:30
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[2PS-034]

우수논문발표상 응모자

Gamma-Ray Irradiation–Induced Surface Hydroxylation of NiOₓ for Robust Interfacial Chelation toward Efficient Perovskite Photovoltaics

발표자채가윤 (중앙대학교)

연구책임자왕동환 (중앙대학교)

공동저자채가윤 (중앙대학교), 김병기 (중앙대학교), 임지현 (중앙대학교), 김진영 (중앙대학교), 왕동환 (중앙대학교)

Abstract

Nickel oxide (NiOₓ) is a cornerstone hole transport material for inverted perovskite solar cells (PSCs), yet conventional sol–gel methods often suffer from thermal annealing-induced defects that impede charge extraction. In this work, we demonstrate a synergistic interface-engineering approach to enhance the chemical and electrical robustness of NiOₓ thin films. By integrating ethylenediamine (EDA) as a chelating agent with subsequent γ-ray irradiation, we effectively regulated the sol–gel kinetics and electronic properties of the NiOₓ layer. The EDA-mediated surface, characterized by abundant hydroxyl groups, facilitated the uniform anchoring of a MeO-2PACz self-assembled monolayer (SAM), optimizing both molecular orientation and energy-level alignment. Consequently, the dual-modified NiOₓ/SAM architecture yielded a high power conversion efficiency (PCE) of 24.06% and significantly improved device stability

Poster