[1PS-006]
우수논문발표상 응모자Deep-Ultraviolet-Responsive Photobase Generators via Bandgap Engineering
발표자김민재 (이화여자대학교)
연구책임자이병훈 (이화여자대학교)
Abstract
Ongoing semiconductor miniaturization requires deep ultraviolet (DUV) sensitive photobase generators (PBGs) to reduce pattern widths of photoresists. In this study, we report a new PBG with naphthalene chromophore, 1-naphthylmethyl N,N-diethyl carbamate (denoted as PEL-02). A comparative analysis of the base generation in DUV regions was conducted by comparing PEL-02 and 9-anthrylmethyl N,N-diethyl carbamate (denoted as PEL-01). PEL-01 exhibits absorption primarily in the (λ ≈ 365nm) due to its anthracene-based structure, whereas PEL-02 shows significantly enhanced absorption in the 200-300 nm range relevant to krypton fluoride (KrF) lithography. Base generation was investigated using a phenol red-based assay, revealing PEL-02 quantitatively generates more base than PEL-01 in the KrF regions. As PEL-02 shows excellent material properties, it demonstrates strong potential for application in KrF lithography and DUV epoxy crosslinking in the semiconductor industry.