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분자전자 부문위원회(III)

  • Apr 10(Fri), 2026, 08:00 - 12:00
  • 포스터장
  • Chair : 양지웅, 여현욱
08:30 - 10:00
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[3PS-062]

Preparation and Characterization of a Solution-Based TiO₂-Polyimide Composite for High-k Dielectric

발표자최한별 (경성대학교)

연구책임자안 택 (경성대학교)

공동저자최한별 (경성대학교), 안 택 (경성대학교)

Abstract

The development of high performance flexible electronics requires dielectrics possessing a high dielectric constant and enhanced mechanical stability. We report on a novel solution-based TiO2-polyimide composite dielectric based on TiO2 precursor as a dopant in cross-linkable polyimide (PI). Polyimide (DOCDA-6FHAB) was synthesized using the monomers, 5-(2,5-dioxytetrahydrofuryl)-3-methly-3-cylohexene-1,2-dicarboxylic anhydride (DOCDA) and 5,5'-(perfluoro propane-2,2-diyl)bis(2-aminophenol) (6FHAB). And then, we introduced TiO2 precursor to make a high dielectric constant polyimide nanocomposite layer. Polyimide nanocomposite bilayer film showed high dielectric constant (6.15) and low leakage current density (1.05ⅹ10-5 A/cm2 at 1 MV/cm) in metal-insulator-metal (MIM) devices. Detailed synthetic routes of polyimide and nanocomposite film fabrication condition will be presented.

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