[2PS-172]
High‐Performance Silicon Anodes Enabled by Spontaneous N‐Doped Graphitic Encapsulation
발표자강보경 (한국과학기술원)
연구책임자김상욱 (한국과학기술원)
Abstract
Severe volume changes during lithiation and delithiation hinder the practical use of silicon (Si) anodes in next‐generation lithium‐ion batteries. To address this issue, a spontaneous self‐encapsulation strategy is proposed, enabling uniform wrapping of Si particles with N‐doped carbon nanomaterials. In this process, N‐doped carbon nanotubes and graphene assemble on Si surfaces at room temperature through pH regulation and electrostatic interactions, eliminating thermal treatments. The resulting Si@N‐CNT electrode exhibits excellent electrochemical performance, delivering a high reversible capacity of 914 mAh g⁻¹ at 10C and retaining 79.4% of its initial capacity after 200 cycles. This behavior originates from the multifunctional N‐doped carbon shell, which buffers volume expansion, stabilizes the solid electrolyte interphase, and facilitates interfacial charge transport. This scalable strategy provides a general platform for stabilizing Si and other alloy‐type anodes.