[3PS-045]
Stretchable High-k Dielectric Metal Oxide Transistor with Azide-functionalized Coordination Ligand
발표자장수련 (포항공과대학교)
연구책임자정대성 (포항공과대학교)
Abstract
Solution-processed, stretchable oxide thin-film transistors (TFTs) are critical for next-generation wearable and Internet of Things (IoT) devices, yet achieving high performance on soft substrates remains a significant challenge. Here, we demonstrate a fully solution-processed, stretchable all-oxide TFT fabricated directly on a polyimide substrate. The active layers employ an organic-inorganic hybrid strategy, where metal oxide nanoparticles are functionalized with synthesized bidentate ligands featuring azide termini and ethylene-glycol bridges. Using this ligand, we fabricated a high-k zirconium dioxide (ZrO₂) gate dielectric and an indium oxide (In₂O₃)/zinc oxide (ZnO) heterojunction semiconductor. The resulting TFTs, fabricated on a 2-μm-thin PI substrate, exhibit a compelling set of performance metrics. This fully solution-based methodology for integrating high-performance oxide semiconductors offers a promising pathway for flexible electronic systems.