Resolving the Intrinsic Mobility-Stretchability Trade-Off via Precise Crystallinity Disruption in Electron-Deficient Semiconductors for Fully Stretchable Electronics
발표자
박하영 (서울대학교)
연구책임자
오준학 (서울대학교)
초록
내용
Developing energy-efficient stretchable electronics is limited by the lack of n-type organic semiconductors combining high electron mobility and mechanical resilience. Here, we present a design strategy incorporating an insoluble polymer segment as a crystallinity disruptor into a semi-crystalline backbone. This approach creates a hierarchical morphology where noncovalent F–H interactions stabilize localized face-on packing while suppressing brittle long-range order. Consequently, the terpolymer exhibits exceptional transport, achieving mobilities exceeding 3.0 cm² V⁻¹ s⁻¹ in flexible transistors. Fully stretchable devices maintain mobilities of ~1.0 cm² V⁻¹ s⁻¹ under 100% strain. Furthermore, fully stretchable phototransistors demonstrate reliable operation with high responsivity at 100% strain. This work establishes a molecular blueprint for intrinsically stretchable, high-mobility semiconductors for next-generation electronics.