Gradient slope engineering of block copolymers with vertical lamellar orientation for EUV lithography etch-mask materials
발표자
김백진 (한국과학기술원)
연구책임자
정연식 (한국과학기술원)
공동저자
김백진 (한국과학기술원), 정연식 (한국과학기술원)
초록
내용
To address insufficient etch resistance and poor pattern quality in sub-10nm EUV lithography, Directed Self-Assembly (DSA) of Block Copolymer (BCP) has emerged as a promising complementary strategy. However, achieving vertical lamellar orientation remains a critical challenge. This study achieves vertical lamellar orientation by designing a deblock copolymer incorporating a gradient block via copolymerization to tune surface energy. Gradient profiles were generated by leveraging polymerization rate disparities between monomers. These profiles were theoretically designed based on temperature and concentration effects and experimentally validated via RAFT polymerization. Synthesized BCPs with various gradient profiles and systematically evaluated their self-assembled morphologies to identify the process window for vertical orientation. Consequently, the designed systems exhibit considerable promise in defining the compositional range for vertical alignment, highlighting their potential as candidate materials for next-generation EUV lithography.