We present a novel remote doping strategy to develop high-performance p-type Tellurium (Te) thin-film transistors (TFTs), addressing the critical trade-off between mobility and switching characteristics of metalic Te semiconductor. By introducing electron-donating polymeric passivation layer atop Te semiconductor via initiated chemical vapor deposition(iCVD), we induce a controlled n-doping effect that effectively suppresses off-current by enlarging the electron injection barrier without compromising charge transport. The resulting Te TFTs exhibit near-ideal transfer characteristics, including a threshold voltage near 0 V, an on/off ratio 104, and a record-high hole mobility of 178 cm2 V−1 s−1. Furthermore, we demonstrate excellent wafer-scale uniformity with 100% yield in a 15 × 9 array. Key applications, including flexible TFTs, high-gain unipolar inverters 173 V/V, and Te–IGZO CMOS circuits, confirm the potential of this approach for scalable, low-temperature electronics.