Electrochemically Gated Regiorandom Polythiophenes for Stretchable Electronics
발표자
박동현 (인하대학교)
연구책임자
이근형 (인하대학교)
조경국 (한국화학연구원)
공동저자
박동현 (인하대학교), 이근형 (인하대학교), 조경국 (한국화학연구원)
초록
내용
Regiorandom semiconducting polymers are attractive for their simple synthesis and solution processability, yet their practical adoption has been hindered by lower carrier mobility than regioregular counterparts. In this presentation, we demonstrate that regiorandom poylthiophenes can achieve high drain current and hole mobility in organic electrochemical transistors (OECTs), supporting their use in stretchable electronics. The large capacitance of the electrolyte gate dielectric overcomes trap-limited transport, enabling improved charge conduction and an ON/OFF ratio of ~104. We further examine how side-chain variations modulate both the electrical response and mechanical compliance. Optimized devices operate reliably up to 200% tensile strain and retain device performance over 1,000 stretching cycles at 100% strain. Moreover, the successful implementation of stretchable logics, including inverters, NAND, and NOR gates, highlights the potential of regiorandom semiconductor.