High-endurance metal incorporated gradient block copolymer enabling sub-20nm pitch patterning for EUV lithography etch mask
발표자
최수빈 (카이스트)
연구책임자
정연식 (카이스트)
공동저자
최수빈 (카이스트), 정연식 (카이스트)
초록
내용
As device integration advances into the sub-20 nm metal pitch regime, extreme ultraviolet (EUV) lithography faces growing limitations in pattern quality and process margin. Directed self-assembly of block copolymers (BCPs) often requires additional surface treatments to achieve stable vertical orientation at sub-10 nm pitches.
Here, we propose a high-endurance metal incorporated gradient BCP architecture inspired by metal-oxide resists (MOR), enabling intrinsic vertical orientation via composition-driven interfacial energy modulation. A poly(tert-butyl acrylate) block was chain-extended with a poly(pentafluorostyrene-gradient-styrene) block via RAFT polymerization. Various organometal functionalities was introduced to systematically tune metal content and evaluate its impact on etch resistance and chemical stability. This approach highlights the potential of gradient block copolymers as polymer-based etch mask platforms for advanced EUV lithography.