Charge-Asymmetry–Driven Ion Retention in Nonvolatile Artificial Synapse
발표자
이동화 (서울과학기술대학교)
연구책임자
이은호 (서울과학기술대학교)
공동저자
이동화 (서울과학기술대학교), 이은호 (서울과학기술대학교)
초록
내용
Electrolyte-gated synaptic transistors (EGSTs) are promising neuromorphic devices in which ion transport and retention govern synaptic weight modulation. However, the relationship between electrolyte ion characteristics and synaptic retention remains insufficiently understood, and electrolyte-based design strategies are still limited. Here, we investigate the role of ionic charge asymmetry in regulating ion retention and synaptic behavior in EGSTs. By systematically tuning ionic structures, we observe distinct differences in ion relaxation and retention within organic semiconductor channels.