For hybrid bonding in advanced packaging, low bonding temperatures are essential to prevent damage to transistors. In this study, Cu/SiO2 hybrid bonding is successfully achieved by combining electroless plating (ELP) with silane modification. Firstly, an Au layer is deposited on the Cu surface, and the SiO2 layer is modified via amino-silane. In the bonding process, pre-bonding is conducted at 120 °C, during which dielectric network is formed through hydrogen bonding, followed by annealing at 250 °C. Accordingly, Cu-Cu bonding is achieved at 250 °C, enabled by the Au layer. The resulting bonding strength is 6.0 MPa, confirmed by a die shear test. These results show that the synergistic effects of Au passivation and amine-induced dielectric network demonstrate the potential of hybrid bonding, for next-generation advanced packaging.
- 본 연구는 2026년도 정부(교육부)의 재원으로 한국연구재단의 지원을 받아 수행된 기초연구사업임 (RS-2022-NR070869)