Chemical Mechanical Planarization (CMP) is a key process for achieving surface planarity in semiconductor wafer fabrication, where silica-based nanoparticles are commonly used as abrasives. In this study, silica nanoparticles with various hollow structures and morphologies were developed and compared with conventional colloidal silica nanoparticles for CMP applications. HSNPs possess lower effective particle density, which can affect their interaction with the wafer surface during polishing. CMP performance was evaluated in terms of material removal rate (RR), within-wafer non-uniformity (WIWNU), and defect formation. The results demonstrate the potential of HSNPs as advanced abrasive materials for next-generation semiconductor manufacturing. *This work was supported by the Technology Innovation Program (RS-2024-00415221) from the MOTIE, funded by the Korean government.