Tin (Sn)-halide perovskites are emerging Pb-free semiconductors for environmentally responsible electronics. Their intrinsically small hole effective masses and weak scattering yield high room-temperature hole mobility, and their low-temperature processability favors monolithic vertical integration. Yet Sn perovskites are chemically labile and crystallize rapidly, often producing defective films that limit efficiency and stability. This talk outlines strategies to stabilize Sn-halide framworks and control film formation via compositional/dopant engineering, guided crystallization, and molecular passivation. Using these approaches, we realize stable, high-mobility thin-film transistors and efficient near-infrared photodetectors. Together, these results define practical routes to Sn-halide perovskite electronics that couple state-of-the-art performance with long operational lifetimes, opening opportunities for next-generation semiconductor systems.