The Polymer Society of Korea

Abstract

 Wearable and convenient electronic devices have emerged as essential components for next-generation electronics and intelligent systems. As the AI era unfolds, research into physical AI- embedded by interactive, sensor integrated devices and robotics-is rapidly expanding. In this context, developing user-friendly electronic devices that can physically interface with AI systems has become increasingly important. Such devices fundamentally require flexible and even stretchable physical characteristics. Semiconducting materials for these electronic components should exhibit not only superior mechanical properties but also high charge carrier mobility and density. From this perspective, semiconducting single-walled carbon nanotubes (s-SWNTs) represent promising materials. In this study, stable and flexible field-effect transistors (FETs) were fabricated using s-SWNTs as an active layer. Additionally, systematic methods to enhance device performance were introduced.