[3PS-084]
Antisolvent engineering of FAPbI₃ for NIR perovskite LEDs
발표자송승우 (광주과학기술원)
연구책임자김호범 (광주과학기술원)
Abstract
Formamidinium lead iodide (FAPbI₃) is widely studied for near-infrared perovskite light-emitting diodes (NIR PeLEDs) owing to its narrow optical bandgap. However, FAPbI₃ exhibits a low exciton binding energy and a high defect density, which lead to exciton dissociation and non-radiative recombination. To address these issues, we employ a series of antisolvent engineering strategies by controlling the crystallinity, grain size, and surface coverage of FAPbI₃ films, thereby enhancing exciton confinement and promoting radiative recombination. Additionally, small-molecule additives are introduced into the antisolvent for defect passivation. This study demonstrates that antisolvent and additive-assisted processing of FAPbI3 can effectively enhance the efficiency and stability of NIR PeLEDs.