[1PS-255]
우수논문발표상 응모자High-Sn containing block copolymers for advanced etch-mask materials in EUV lithography
발표자김백진 (한국과학기술원)
연구책임자정연식 (한국과학기술원)
Abstract
EUV lithography, a key technology for sub-10 nm patterning that faces significant challenges, including insufficient etch resistance and poor pattern quality. DSA of BCP has emerged as a promising complementary strategy to complement EUV lithography by enabling high aspect ratios and reduced defectivity. In this study, high-Sn BCPs were developed to address two primary issues: enhancing etch contrast by incorporating inorganic Sn content, and vertical lamellar alignment without neutral layers. Monodisperse reactive polymers were synthesized via RAFT polymerization, followed by post-polymerization modification to introduce organostannyl moieties. The opposite block was designed as a gradient block to modulate surface energy across the interface, thereby promoting vertical lamellar self-assembly. The resulting BCP exhibited well-ordered pattern with process simplicity. These results highlight their potential as promising candidates for advanced nanopatterning applications.