[1L11-5]
Multifunctional Heterojunction Thin-Film Transistors Based on p-Te/n-Al:IZTO
발표자남수지 (한국전자통신연구원)
연구책임자남수지 (한국전자통신연구원)
Abstract
Heterojunctions play a pivotal role in enhancing the electrical characteristics and enabling multifunctional behaviors in thin-film transistors (TFTs). In this study, we report a novel heterojunction TFT integrating p-type tellurium (Te) and n-type aluminum-doped indium-zinc-tin oxide (Al:IZTO), which enables precise threshold voltage (VT) modulation and supports advanced logic functionalities. The proposed architecture employs Te as an electron-blocking layer and Al:IZTO as a high-mobility charge transport layer, forming a well-defined heterointerface that facilitates controlled carrier injection. Beyond VT modulation, the device demonstrates zero and negative differential resistance behavior, enabling the realization of low-power ternary inverters and NAND gates. These findings underscore the potential of horizontal heterojunction engineering for next-generation multifunctional and energy-efficient electronic systems.