[3PS-148]
Fabrication of PbS QD-mediated Organic-Inorganic Hybrid SWIR OPDs using FPA-S Photo-crosslinker
발표자박교빈 (포항공과대학교)
연구책임자정대성 (포항공과대학교)
Abstract
Short-wave infrared (SWIR) photodiodes are widely studied for applications in medical, defense, and industrial imaging. Conventional InGaAs-based devices are expensive and incompatible with CMOS due to lattice mismatch. Quantum dots (QDs) offer a low-cost, CMOS-compatible alternative with tunable bandgaps, but long-wavelength QDs tend to be unstable due to their large particle sizes. To improve film quality and stability, we blend QDs with organic polymers. However, simple blending often leads to poor miscibility and phase separation due to interfacial energy mismatch. To overcome this, we introduce an azide-functional ligand (FPA-S) that binds to QDs and photo-crosslinks with polymers, thereby suppressing phase separation. Devices fabricated using this method achieve external quantum efficiency over 80% at 1600 nm, a dark current of 20 nA/cm² at −0.5 V, and breakdown voltages exceeding −20 V.