[3PS-109]
Enhanced Mobility and Low-Voltage Operation in Organic Source-Gated Transistors Through Electrode Structure Modification
발표자김용희 (부경대학교)
연구책임자이은광 (부경대학교)
Abstract
Organic source-gated transistors (OSGTs) represent a device architecture for low-power applications, including wearable circuits, amplifiers, and LED backplanes. While OSGTs exhibit a low saturation drain voltage (VDS,sat) for rapid saturation operation, they suffer from reduced mobility due to the low current from the Schottky barrier. This study addresses the limitations using patterned source electrodes of ohmic contact with partial Schottky contact electrodes, giving the minimum required Schottky barrier. The modified OSGT showed a significantly reduced VDS,sat, compared to organic field-effect transistors (OFETs). Remarkably, the device demonstrated a mobility comparable to OFET and showed a ten-fold improvement over conventional OSGT. The high-mobility and low-voltage OSGTs can overcome traditional trade-offs between low-voltage operation and high mobility in organic transistors.