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분자전자 부문위원회(III)

  • Oct 01(Wed), 2025, 08:00 - 12:00
  • 포스터장
  • Chair : 안효성,양상희
08:30 - 10:00
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[3PS-100]

Sensitivity Enhancement of Extended-Gate Field-Effect Transistors via Dual-Gate Operation

발표자김혜선 (경기대학교)

연구책임자하영근 (경기대학교)

공동저자김혜선 (경기대학교), 하영근 (경기대학교)

Abstract

Extended-gate field-effect transistors (EGFETs) are promising for real-time chemical and biosensing due to their high sensitivity and flexibility. However, their performance is often limited by the Nernst response and affected by ion screening in complex fluids. Here, we present a dual-gate (DG) EGFET platform to overcome these issues. The back-gate voltage enables capacitive coupling with the electrolyte gate, allowing precise modulation of the channel potential and amplifying the sensor’s response to surface potential changes. To ensure stability in liquid environments such as phosphate-buffered saline (PBS), we apply a self-assembled multilayer (SAML) as a passivation layer to prevent leakage current. This approach significantly improves both sensitivity and stability, demonstrating the potential of DG-EGFETs in advanced biosensing applications.
 

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