Development of organometallic compound precursors for narrow-bandgap, high-mobility semiconductors based on van der Waals layered materials
발표자
임종선 (한국화학연구원)
연구책임자
임종선 (한국화학연구원)
초록
내용
Two-dimensional van der Waals layered materials exhibit excellent mechanical and electrical properties. Due to these characteristics, van der Waals layered materials are emerging as key materials for flexible and stretchable semiconductors and displays, as well as flexible sensors that require flexibility and stretchability. However, the current process for growing transition metal chalcogenide thin films using transition metal precursors or chalcogen precursors or powders requires high-temperature processing at around 800 °C, making it difficult to directly process on flexible/stretchable substrates The present study developed a precursor compound platform for van der Waals layered materials that can be processed at low temperatures to address these issues. We developed new precursors containing desired transition metals and chalcogen elements and conducted application studies on various high-mobility semiconductors and narrow bandgap photodetectors using these precursors.