Selective Etching of SiGe via Surface Passivation Using Self-Assembled Monolayers of Organic Molecules
발표자
남건희 (포항공과대학교)
연구책임자
정대성 (포항공과대학교)
초록
내용
We demonstrate a method for the selective etching of silicon-germanium (SiGe) by employing surface passivation with self-assembled monolayers (SAMs) of organic molecules. These SAMs form a densely packed, covalently bonded layer on the SiGe surface, effectively suppressing etching reactions in protected areas. This enables spatial control over etch rates, which is essential for advanced semiconductor device fabrication requiring nanoscale precision. By tuning the terminal groups and chemical affinity of the SAMs, surface reactivity can be selectively modified at the molecular level. The technique is compatible with standard lithography and etching processes, offering a promising route for integrating SiGe heterostructures into next-generation transistors and quantum devices.