Engineering High-Performance Silicon Anodes through Spontaneous N-Doped Graphitic Encapsulation
발표자
강보경 (한국과학기술원)
연구책임자
김상욱 (한국과학기술원)
초록
내용
Silicon (Si) anodes are promising for next-generation lithium-ion batteries (LIBs) but face challenges from significant volume changes. This study introduces an innovative self-encapsulation strategy for Si particles using N-doped carbon nanomaterials. We developed a novel, room-temperature method where N-doped carbon nanotubes (CNTs) and graphene spontaneously encapsulate Si particles via pH control and electrostatic interactions, avoiding complex high-temperature processing. The optimized Si@N-CNT electrode showed outstanding electrochemical performance: 79.4% capacity retention after 200 cycles and 914 mAh g⁻¹ at 10C. This superior performance results from the N-doped carbon layer buffering volume changes, forming a stable SEI, and enhancing charge transfer. This technology offers a promising solution for Si anodes and other alloy-based electrode materials.