Injection Layer Formation via Reactive Ion Etching for Reducing the Contact Resistance in Organic Schottky Barrier Transistors
발표자
심혜륜 (포항공과대학교)
연구책임자
정대성 (포항공과대학교)
초록
내용
Organic Schottky barrier transistors (OSBTs), defined by short channel lengths based on the thickness of the active layer, utilize a Schottky barrier to determine the off-state, which removes the need for an insulating layer within the semiconductor and allows for an uncomplicated, scalable production process. However, the Schottky barrier creates significant contact resistance, a primary limitation impacting the device's overall electrical performance. While adding a charge injection layer can mitigate contact resistance, installing it beneath randomly formed source electrodes is challenging. In this research, we utilized oxygen-based reactive ion etching to place a charge injection layer under the source electrode, which increased the on-current and enhanced charge injection capabilities. This approach enabled the achievement of the highest on/off ratio of 3.38×107 in the OSBT and ensured high stability by employing a non-doped semiconductor as the active layer.