Sensitivity Enhancement of Extended-Gate Field-Effect Transistors via Dual-Gate Operation
발표자
김혜선 (경기대학교)
연구책임자
하영근 (경기대학교)
초록
내용
Extended-gate field-effect transistors (EGFETs) are promising for real-time chemical and biosensing due to their high sensitivity and flexibility. However, their performance is often limited by the Nernst response and affected by ion screening in complex fluids. Here, we present a dual-gate (DG) EGFET platform to overcome these issues. The back-gate voltage enables capacitive coupling with the electrolyte gate, allowing precise modulation of the channel potential and amplifying the sensor’s response to surface potential changes. To ensure stability in liquid environments such as phosphate-buffered saline (PBS), we apply a self-assembled multilayer (SAML) as a passivation layer to prevent leakage current. This approach significantly improves both sensitivity and stability, demonstrating the potential of DG-EGFETs in advanced biosensing applications.