Containing Extended π-Bridge Near-Infrared Absorbing Non-Fullerene Acceptors for Sensitive Organic Photodetectors over 1000 nm
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내용
NIR photodetection has garnered significant attention across diverse industries like optical communication, and biosensing platforms. Previously, inorganic detectors based on silicon (Si) materials have been limited sensitivity in the NIR range (above 900 nm) poses challenges. To overcome these limitations, organic photodetectors (OPDs) offer promising features, including tunable optical characteristics. This study focuses on achieving NIR OPDs by controlling the π-bridges of non-fullerene acceptors (NFAs). By introducing a vinyl group as a π-bridge, the synthesized NFA, CTIC-2vy-4F, demonstrates a reduced optical bandgap of 1.13 eV, compared to CTIC-4F (1.30 eV) NFAs. Consequently, this modification extends the NIR absorption capabilities, leading to improved detectivity (D*) at 6.56 × 1011 cm Hz1/2 W-1, particularly in the 1000 nm wavelength range at a -2 V bias. This work provides valuable insights for designing NFA materials that empower NIR OPDs to efficiently detect and respond to light above 1000 nm.