Vertical 3-Terminal Artificial Synapse With Porous Source Electrode
발표자
()
초록
내용
Vertical 3-terminal artificial synapses (VTAS) offer great advantages, enabling separate reading and writing processes for nondestructive weight control and shorter vertical channels. In our study, we introduced a metal thin film formed as a porous source electrode through thermal evaporation in a vacuum chamber, which has numerous nanoscale pinholes that allow the electric field to pass through from the gate dielectric. Additionally, we controlled the pinhole morphologies, such as density or size, to enhance the electric field permeability. VTAS exhibited high current density at low voltage. Light pulses triggered biological synapse characteristics like short-term plasticity (STP), long-term plasticity (LTP), and spike-timing-dependent plasticity (STDP) by trapping charges in the active layer and light-absorbing material. These novel findings make photonic VTAS promising for image sensing and optical communication devices.