Enhancing Device Stability and Performance of p-type Zn:CuI Thin-Film Transistors through Passivation and Anion Doping for Monolithic 3D Vertical Inverters
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내용
Recently, Zn-doped copper iodide (Zn:CuI) was reported as a promising p-type semiconductor for solution-processed thin-film transistors (TFTs) due to its high hole mobility and low-temperature processability. However, to further expand its applications, the device stability of Zn:CuI under the air and biased conditions needs to be improved. To address this challenge, passivation layers were introduced on the Zn:CuI TFTs. As a result, the TFTs exhibited enhanced performance with reduced the off-state currents and the appropriate threshold voltages. Moreover, by introducing anion doping on Zn:CuI, both mobility and bias stability were improved. Leveraging these results, monolithic 3D vertical complementary inverters were successfully fabricated, using an In2O3/ZnO bilayer as the n-type counterpart.