Indium based semiconductors have been widely investigated in advanced technologies for its promising electronic and optoelectronic properties. Among them, In2Se3 has been reported as an encouraging material applicable to field-effect transistor(FET), non-volatile memory(NVM) or ferroelectric semiconductor-FET(FeS-FET) due to its polymorphic nature. Despite its capability, remarkable In2Se3 FET and the large-scale synthesis method of uniform In2Se3 active layer remains insufficient. Here, we report highly performing In2Se3 FET with notable field-effect mobility exceeding 30 cm^2/V·s and high on/off ratio over 10^8 by utilizing thermal evaporation. Adopting concise and direct thermal evaporation method has the potential to become a potent and effective approach for addressing the large-scale synthesis issue. This research holds significance in both increasing the potential for utilizing In2Se3 material in transistors and its advantageous applicability in large scale fabrication processes.