Efficient Suppression of Dark Current for Sensitivity Near-Infrared Organic Photodetectors Achieved by Increasing Charge Injection Barrier through Fluorine Substitution
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Near-Infrared (NIR) Organic Photodetectors (OPDs) have been considerable attention for potential of NIR applications. However, Current NIR OPDs suffer from low sensitivity with non-fullerene acceptors (NFAs) due to dark current density (Jd). To address these issue, NFAs have been developed for OPDs materials due to achievement of tunable NIR absorption and adjusted charge injection barrier (Φb). Herein, We synthesized new NFAs by introducing fluorine substituted π-bridge, which affect low lying HOMO energy level for increasing the value of Φb. Also, we demonstrated thieno[3,4-b]thiophene π-bridge with quinoidal population, which enhance the intramolecular charge transfer. Therefore, fluorine substituted π-bridge provide deep insight into design of NIR OPDs materials, which facilitate obtaining photoresponse in the NIR region and superior sensitive detection by reducing Jd.