Strain-Effect Driven Variations in Hysteresis Behavior of Organic Thin-Film Transistors in Wrinkled Conjugated Polymers
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Interest in organic-based flexible electronics has grown rapidly in recent years. There is a need to systematically study how various types of defects caused by mechanical strain contribute to the electrical stability of devices. However, there has not been much study on the subject. Herein, we investigated the strain-effect on the hysteresis behaviors of organic thin-film transistors when wrinkles are formed on conjugated polymer. The formation of wrinkles by the stretched PDMS was controlled by strain intensity applied to the PDMS. We found that the variation in electrical behavior was affected by the density of electron/hole trap sites that generated when the wrinkles were formed. By phenomenologically analyzing the transfer characteristics, a new band diagram was suggested and the mechanism of the variation in electrical behavior was explained. In order to derive electrically reliable properties for the next-generation of nanoelectronics, our study provides new insights.