Solution-Processed Molybdenum Disulfide Single flake Transistor
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초록
내용
Transition metal dichalcogenides (TMDs) are one of the most promising semiconducting materials to their superior electrical characteristics and unique optical properties. Thanks to the dangling bond-free surface and ultrathin body thickness of TMDs, it is suggested as an excellent candidate for sub-10 nm transistor channels. Liquid phase exfoliation is cost-efficient and largely scalable for incorporating nanoflakes. However, relatively small flakes were obtained and this restricted the solution-processed single-flake study because of engineering compatibility. To figure the issue out, we adopted electrochemical exfoliation to overcome the single flake studying size limitation. The exfoliated MoS2 shows more than 2 um lateral size and its thickness is near 2.0 nm. We fabricated the MoS2 flake transistor with general photolithography, and it shows a 105 on/off ratio, and 8.5 cm2 V-1 s-1 mobility. We believe this can be one of the solution-processed single-flake studying platforms.