Fabrication of nano-interpenetrating semiconducting network using oligomer based photo-crosslinker for an all polymeric stretchable transistor array.
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The growing attention towards intrinsically stretchable organic semiconducting materials is a notable trend due to their potential applications in human-machine interfaces. However, the inherent vulnerability of polymers to solvent exposure constitutes a dual-edged attribute; it facilitates economical fabrication through solution processing while it presents challenges in establishing a complicated circuit. In this study, this author introduced a novel approach to realize a comprehensive polymeric stretchable transistor array, employing an oligomer-based photo crosslinker. This method harnesses a conventional photo-crosslinking method with the oligomer-based crosslinker, which creates a nano-interpenetrating network with organic semiconductor under simple UV exposure. This strategy not only facilitates precise patterning but also enhances the stretchability of organic semiconductor.