Shape profiling technique of photolithography pattern using synchrotron small-angle X-Ray scattering
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Photolithography is a process of engraving a desired shape on a substrate. It is important to analyze the difference between the design and the result. We conducted a study on a technique for non-destructive cross-sectional profile analysis using synchrotron small-angle X-Ray scattering (SAXS). We developed patterns with various pitches from 80 nm to 200 nm. And simulation result was obtained using the Python programming language and the SAXS simulation tool Bornagain. These results were compared with actual experimental data of 100 nm pitch pattern and SEM images. The results were 102 nm. Due to technological advancements, semiconductor patterns are becoming highly fine. Research on technologies such as EUV lithography is underway to achieve even finer patterns. So, it is essential to measure the pattern more precise and accurate. With these trends, the non-destructive cross-sectional shape analysis technique using SAXS is expected to applicable to photolithography research.