Impact of Lewis-base Molecules on Defect Passivation in 2-D Halide Perovskite Field-Effect Transistors.
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The unique electronic and optoelectronic characteristics of metal halide perovskites (MHPs) are attracting considerable interest, yet their usage in device applications is limited by issues like lead toxicity and stability. In response to these obstacles, research is being conducted into lead-free tin-based perovskite substances such as PEA2SnI4[1]. This material exhibits potential as a p-type field-effect transistor due to its inherent p-doping properties and enhanced stability in comparison to its three-dimensional equivalents[2]. However, problems such as self-oxidation and ion migration across grain boundaries pose challenges. We're employing Lewis acid-base small molecules to investigate defect passivation strategies in tin-based perovskites and to improve FET characteristics. This work may facilitate the creation of sophisticated electronic devices employing halide-perovskite materials with superior performance.