High vertical mobility with F4-TCNQ doped end-on structure in conjugated polymer
발표자
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초록
내용
We synthesized poly(3-hexylthiophene)-block-poly(3-(2-methoxyethoxy)methylthiophene) copolymer (P3HT-b-P3MEGT) with a controlled rtegioregularity (RR) of P3HT. P3HT-b-P3MEGT with RR of P3HT having 82 % exhibited an end-on orientation. The vertical hole mobility of P3HT-b-P3MEGT was enhanced more than 30 times compared to edge-on oriented P3HT homopolymer thin films with high RR (95 %). To eliminate the water-induced traps present in the P3HT-b-P3MEGT with the end-on structure, we doped it with F4-TCNQ, resulting in the fabrication of SCLC devices demonstrating trap-free charge transport. The F4-TCNQ doped P3HT-b-P3MEGT exhibited approximately 2.5 times enhanced vertical hole mobility compared to neat P3HT-b-P3MEGT.