One mold patterning process of organic thin film layers for high-performance OTFT by selective contact evaporation printing
발표자
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초록
내용
Selective contact evaporation printing (SCEP) method is introduced for the integrated device with the controlled gate leakage current of organic thin film transistor (OTFTs). The dielectric and semiconducting layer are carefully patterned with the pre-patterned poly(dimethyl siloxane) (PDMS) mold for realizing the surface modification of each layer with under-micron pattern width. Since both the dielectrics and semiconductor layers can be applied with one mold using SCEP like this, the fabrication process of OTFT can be simplified and patterns of various shapes can be made through one mold. Moreover, organic semiconductors are patterned with under-micron level scales by SCEP with control of contact conditions. Then, the OTFTs with the patterned layers are fabricated are evaluated for highly integrated electric devices.