Patterning of Transistor Hard Masks based on Selective Wetting Phenomenon
발표자
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초록
내용
Self-assembly of soft materials for producing metal or inorganic patterns is a prominent technique to surpass resolution limits (~20 nm). Block copolymers (BCPs) are commonly used, but integrating them with FET fields necessitates multiple transfer techniques. To achieve direct nano-scale patterning, selective wetting phenomenon is explored, where materials selectively deposit on one block of an aligned pattern. This phenomenon can be attributed to topographical and chemical affinity differences. This study employs ~5 nm feature size dendrimers as templates instead of BCPs, showcasing strong self-assembly properties for line and dot patterns both. By the chemical affinity difference between dendrimer core and tail parts, selective deposition of metals through e-beam evaporation is achieved.