Enhanced Stability of 2D/3D Perovskite Transistor with Hollow Structure through Diammonium Cation Incorporation
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The Sn-based halide perovskite is a promising candidate for the channel layer of transistor due to its intrinsic p-type properties and high hole mobility. However, its use as a channel layer of p-type transistor is challenging owing to the instability caused by facile oxidation of Sn2+ to Sn4+. Here, we demonstrated an air-stable hollow perovskite film by incorporating diammonium cations into 2D/3D perovskite. The incorporation of diammonium increases the bandgap, which results in the suppression of Sn2+ oxidation. Consequently, the hollow 2D/3D perovskite transistor retained its constant transfer characteristics for about 300 h in a N2 filled glove box, which is more than 7 times longer than the pristine 2D/3D perovskite transistor. The diammonium in 2D/3D perovskite acts as a larger A cation and increases the bandgap by forming the Schottky type defects. This novel stability enhancement strategy offers potential for the commercialization of Sn-based perovskite transistor.