Development of dark current suppressing strategy for organic photodetector using small molecule acceptor
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초록
내용
Recently, organic photodetectors (OPD) have been gathered an attraction for numerous fields, such as military-tactical applications, image sensors, and optical communications due to their facile processable, low-cost and unique mechanical properties. However, high dark current density (Jd) is a main challenge which causes high level of noise-to-signal ratio, resulting in low resolution. Herein, we synthesized two different non-fullerene acceptors (NFA), named as, C-NPDI and I-NPDI which possess alkyl surrounded structure to reduce Jd. The fabricated OPD devices showed high specific detectivity (D*) up to 1013 Jones due to contribution of alkyl surrounded structure for low Jd level.