Modulation of cationic reactivity for synthesis of homogeneous InGaP alloyed quantum dots
발표자
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초록
내용
For the last few decades, the quality of photoluminescence (PL) of III-V InP quantum dots (QDs) has been greatly enhanced to match up with hazardous Cd-containing predecessors. However, the study on the synthetic approach toward the formation of the blue-emitting InP-based QDs still lagging, impeding the fabrication of QD electroluminescence devices. Introducing such metals as gallium to the binary system may address the problem by blue-shifting the emission of the InP QDs through forming an InGaP ternary core, yet the reactivity discrepancy between each cation holds back from the formation of a homogenous alloy. Herein, we introduce a strategy to synthesize the homogeneous InGaP QDs by modifying the reactivity of each metal precursor through ligand engineering. With a newly adapted synthetic strategy, homogeneous InGaP QDs with a cyan PL peak at 475 nm were obtained, compared to that of InP QDs which exhibited green PL emission at 530 nm.