Polymer-based Top-down Nanolithography for High Performing Hydrogen Sulfide (H<sub>2</sub>S) Sensor
발표자
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초록
내용
Gas sensor is one of the most important technology upon 4th industrial revolution. Among them, metal oxide semiconductors (MOS) show huge potential as high performing hydrogen sulfide (H2S) sensors. Herein, polymer-based top-down lithographic process to create a 15nm SnO2 nanochannel for exceptional H2S detection. Nanopatterns showed high resolution and aspect ratio strcuture with superior sensing performance (Ra/Rg > 100, response speed < 35 sec at 0.5 ppm, selectivity > 20 against 5 ppm acetone). We further illustrated that the nanochannel can be effectively sensitized with a p-n heterojunction, without requiring extra steps. For instance, we showed that the performance of the H2S sensor could be significantly improved by nickel oxide (NiO) nano-heterojunction (Ra/Rg = 160, response speed < 25 sec at 0.5 ppm), representing one of the highest sensitivity reported so far.