LER Reduction in EUV Lithography using DSA of Janus-Type Bottlebrush Polymers
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초록
내용
Extreme Ultraviolet (EUV) lithography encounters issues such as Line Edge Roughness (LER) and bridge defects, thus diminishing pattern quality and productivity. In this study, we present an approach to improve the pattern quality by leveraging Directed self-assembly (DSA) of block copolymers. Our Monte Carlo simulations with coarse-grained polymer model show that DSA of linear AB block copolymer on an EUVL-generated substrate effectively mitigated LER and eliminated bridge type defects in EUV patterns. We further explored the potential of enhancing LER through Janus-type bottlebrush polymers, characterized by a rigid backbone grafted with two immiscible A and B homopolymer sidechains. The rigidity of backbone induced by the high grafting density and steric hindrance between sidechains facilitates well-aligned microdomains at the interface. We have also systematically examined the effect of backbone length, grafting density, side chain distributions in bottlebrushes on LER reduction and defect removal.